電漿切割

適用於電漿切割的 Mosaic™ 系統

採用深層反應式離子蝕刻 (DRIE) 制程的電漿切片迅速獲得半導體產業的認可，成為使用鋸片或雷射的傳統分離方式的可行替代方案。

電漿切割可以為使用者帶來諸多優勢

  • 產能更高，每個晶圓產出的芯片可以提升最多 80%
  • 良率更高，芯片強度可以提升最多 100%
  • 靈活的芯片佈局及設計。

電漿切割可以在研磨前進行，此時會將晶圓中的切割道做深度蝕刻，並且透過最終晶背研磨作業來分離芯片，或是在研磨後進行，此時會將磨薄後的晶圓裝載在捲帶架或載體上，而使用 DRIE 進行蝕刻。

電漿切割與錫鉛凸塊和晶背金屬相容，而且 Mosaic™ 電漿切割解決方案也已經在許多切割架及捲帶上成功證明可以在標準/薄/TAIKO 晶圓及晶圓片上進行「研磨後切割」。

分離的芯片影像：

 

按一下此處以瞭解關於電漿切割的詳情

按一下此處以瞭解關於電漿切割的詳情

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