LPCVD / Diffusion for MEMS

SPTS’s AVP/RVP large batch thermal process system delivers flexible, low cost, solutions that enable a simple transition from pilot to high volume production.

Benefits of SPTS LPCVD/diffusion processes for MEMS

  • Low CoO thick doped and un-doped polysilicon
  • Highly productive stress-controlled SiN
  • High deposition rate TEOS for HAR gap-fill
  • Low temperature (<450°C) LPCVD SiGe
  • Highly uniform wet/dry thermal SiO2
  • 100 to 1,200°C thermal annealing

Related Product Information

Thick Poly-Si for MEMS

SPT’s Advanced Vertical Processor (AVP) has been designed to deposit doped and un-doped polysilicon films >4μm thick without wafer sticking

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LPCVD SiN for MEMS

SPT's LPCVD SiN process that combines the excellent stress control and process repeatability of a PECVD process together with the benefits of low wet etch rate and low ownership cost of an LPCVD system

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H2 Annealing for MEMS

Surface transformation to remove the "scallops", created by silicon DRIE during MEMS manufacturing, can be achieved by annealing the Si wafers at high temperature (~1100°C) in a H2 ambient in SPT's RVP furnace.

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