Low Temp CVD for MEMS
Low temp Plasma Enhanced Chemical Vapor Deposition (PECVD) solutions for depositing uniform and stable SiN and SiO films for MEMS devices at temperatures <200°C.
下載PECVD for MEMS
MEMS applications demand use a wide range of dielectric film types and requirements are becoming more stringent as MEMS devices become increasingly sophisticated. SPTS’s PECVD module offers SiO, SiN and amorphous silicon films tailored to meet the needs of MEMS manufacturers.
Benefits of SPTS PECVD:
- High deposition rate SiOx and SiN
- TEOS for enhanced step coverage
- Stress tuning by dual RF
- Dense, low hydrogen SiN films offer lower wet etch rate
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