PVD for RF-IC

SPTS has a wide range of PVD module technologies to meet the demands of compound RF-IC and MMIC manufacturing. Typical applications include:

  • Frontside Au Interconnect compatible with lift-off patterning
  • Super Uniformity Thin Film Resistors (TFR)
  • Gold (Au) and Copper(Cu) seeds for backside via
  • Copper (Cu) seeds for µBump WLP
  • Bulk acoustic wave (BAW) electrodes & piezoelectric layers
  • Surface acoustic wave (SAW) electrode & encapsulation

Benefits of SPTS PVD for Compound Semiconductors RF-IC

  • Flexible, extendible hardware
  • Mainstream Si reliability
  • Wide range of materials experience
  • Continued support of ≤ 200 mm wafer sizes
  • Unique ESC, compatible with sapphire carriers without the need for a back-coat

Related Product Information

Sigma PVD Product Information  

AlN PVD for RF-IC & MEMS

Piezoelectric properties of AlN to convert mechanical strain into an electric signal, or vice versa is being exploited in devices such as RF filters and a growing number of MEMS.

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Plasma Processes for Compound Semiconductors

Overview of the plasma processing technologies which SPTS offers for a variety of compound semiconductor applications such as RF, power and photonic device manufacturing.

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